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PD - 96900
DIGITAL AUDIO MOSFET
IRF6665
Key Parameters 100 53 8.7 1.9 V m: nC
Features
* Latest MOSFET Silicon technology * Key parameters optimized for Class-D audio amplifier applications * Low RDS(on) for improved efficiency * Low Qg for better THD and improved efficiency * Low Qrr for better THD and lower EMI * Low package stray inductance for reduced ringing and lower EMI * Can deliver up to 100W per channel into 8 with no heatsink * Dual sided cooling compatible * Compatible with existing surface mount technologies * Lead and Bromide Free Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
VDS
RDS(on) typ. @ VGS = 10V Qg typ. RG(int) typ.
SH
ST SH MQ MX MT MN
DirectFET ISOMETRIC
SQ
SX
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. The IRF6665 device utilizes DirectFET TM packaging technology. DirectFET TM packaging technology offers lower parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET TM package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The DirectFET TM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TC = 25C PD @TA = 25C PD @TA = 70C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation
Max.
100 20 19 4.2 3.4 34 42 2.2 1.4 0.017 -40 to + 150
Units
V
A
c
e Power Dissipation e
Power Dissipation
W
Linear Derating Factor Operating Junction and Storage Temperature Range
W/C C
Thermal Resistance
RJA RJA RJA RJC RJ-PCB
ek Junction-to-Ambient hk Junction-to-Ambient ik Junction-to-Case jk
Junction-to-Ambient
Parameter
Typ.
--- 12.5 20 --- 1.4
Max.
58 --- --- 3.0 ---
Units
C/W
Junction-to-PCB Mounted
Notes through are on page 2
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1
10/11/04
IRF6665
Static @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS IGSS RG(int) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance
Min.
100 --- --- 3.0 --- --- --- --- ---
Typ.
--- 0.12 53 --- --- --- --- --- 1.9
Max.
--- --- 62 5.0 20 250 100 -100 2.9
Units
V V/C m V A nA
Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 1mA VGS = 10V, ID = 5.0A VDS = VGS, ID = 250A VDS = 100V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V
f
Dynamic @ TJ = 25C (unless otherwise specified)
Parameter
gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Parameter EAS IAR Single Pulse Avalanche Energyd Avalanche CurrentA
Min.
6.6 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ.
--- 8.7 2.1 0.58 2.8 3.2 3.38 7.4 2.8 14 4.3 530 110 29 510 67 130
Max.
--- 11.7 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- ---
Units
S VDS = 50V VGS = 10V ID = 5.0A nC
Conditions
VDS = 10V, ID = 5.0A
See Fig.6 and 16
VDD = 50V ID = 5.0A ns RG = 6.0 VGS = 10V VGS = 0V VDS = 25V pF = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 80V, = 1.0MHz VGS = 0V, VDS = 0V to 80V Max. 11 5.0
f
g
Avalanche Characteristics
Units mJ A
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge --- --- --- --- 31 37 1.3 --- --- V ns nC --- --- 34
Min.
---
Typ.
---
Max.
4.2
Units
A
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 5.0A, VGS = 0V TJ = 25C, IF = 5.0A, VDD = 25V di/dt = 100A/s
G S D
f
f
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.89mH, RG = 25, IAS = 5.0A. Surface mounted on 1 in. square Cu board. Pulse width 400s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Used double sided cooling , mounting pad. Mounted on minimum footprint full size board with
metalized back and with small clip heatsink. (Drain) of part.
TC measured with thermal couple mounted to top R is measured at TJ of approximately 90C. Based on testing done using a typical device & evaluation board
at Vbus=45V, fSW=400KHz, and TA=25C. The delta case temperature TC is 55C.
2
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IRF6665
100
TOP VGS 15V 10V 9.0V 8.0V 7.0V 6.0V
100
TOP VGS 15V 10V 9.0V 8.0V 7.0V 6.0V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
10 6.0V
BOTTOM
6.0V 1
1
60s PULSE WIDTH
Tj = 25C 0.1 0.1 1 10 100 1000 V DS, Drain-to-Source Voltage (V) 0.1 0.1 1
60s PULSE WIDTH
Tj = 150C 10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
Fig 2. Typical Output Characteristics
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current ()
ID = 5.0A VGS = 10V
10
1.5
T J = -40C T J = 25C 1 T J = 150C VDS = 25V 60s PULSE WIDTH 0.1 2 4 6 8 10 12
1.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
10000
Fig 4. Normalized On-Resistance vs. Temperature
12.0 ID= 5.0A
VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
10.0 8.0 6.0 4.0 2.0 0.0
C, Capacitance(pF)
VDS= 80V VDS= 50V VDS= 20V
1000 Ciss Coss 100 Crss
10 1 10 VDS, Drain-to-Source Voltage (V) 100
0
2
4
6
8
10
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
QG Total Gate Charge (nC)
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3
IRF6665
100
1000 Tc = 25C Tj = 150C Single Pulse
OPERATION IN THIS AREA LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
100sec
10 T J = -40C T J = 25C T J = 150C VGS = 0V 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V)
1 DC
1msec 10msec
0.1
0.01 0 1 10 100 1000 VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
5
VGS(th) Gate threshold Voltage (V)
5.5
Fig 8. Maximum Safe Operating Area
4
ID, Drain Current (A)
5.0
4.5
3
4.0
2
3.5
ID = 250A ID = 1.0A
1
3.0
ID = 1.0mA
0 25 50 75 100 125 150 T C , Case Temperature (C)
2.5 -75 -50 -25 0 25 50 75 100 125 150
T J , Temperature ( C )
Fig 9. Maximum Drain Current vs. Case Temperature
100
Fig 10. Threshold Voltage vs. Temperature
D = 0.50
Thermal Response ( Z thJA )
10
0.20 0.10 0.05
1
0.02 0.01
J
R1 R1 J 1 2
R2 R2
R3 R3 3
R4 R4 4
R5 R5 C 5
Ri (C/W)
1.6195 2.1406 22.2887 20.0457 11.9144
i (sec)
0.000126 0.001354 0.375850 7.410000 99
1
2
3
4
5
Ci= i/Ri Ci= i/Ri
0.1
SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc
0.01 0.1 1 10 100
0.01 1E-006 1E-005 0.0001 0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF6665
RDS(on) , Drain-to -Source On Resistance ( m)
200 180 160 140 120 100 80 60 40 20 0 4 6 8 10 12 14 16 18 T J = 25C T J = 125C ID = 5.0A
RDS(on), Drain-to -Source On Resistance ( m)
120
100
T J = 125C
80
60
T J = 25C Vgs = 10V
40 0 2 4 6 8 10 ID, Drain Current (A)
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. On-Resistance vs. Drain Current
15V
50
EAS , Single Pulse Avalanche Energy (mJ)
VDS
L
DRIVER
40
ID TOP 0.86A 1.3A BOTTOM 5.0A
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
30
A
0.01
20
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS tp
10
0 25 50 75 100 125 150 Starting T J , Junction Temperature (C)
Fig 14c. Maximum Avalanche Energy vs. Drain Current
I AS
Fig 14b. Unclamped Inductive Waveforms
VDS VGS RG RD
D.U.T.
+
90%
- VDD
VDS
10%
10V
Pulse Width 1 s Duty Factor 0.1 %
VGS
td(on) tr td(off) tf
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Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
5
IRF6665
Current Regulator Same Type as D.U.T.
Id Vds Vgs
50K 12V .2F .3F
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Current Sampling Resistors
Qgs1 Qgs2
Qgd
Qgodr
Fig 16a. Gate Charge Test Circuit
D.U.T
Fig 16b. Gate Charge Waveform
Driver Gate Drive P.W. Period D= P.W. Period VGS=10V
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * di/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
* VGS = 5V for Logic Level Devices Fig 17. Diode Reverse Recovery Test Circuit for N-Channel HEXFET(R) Power MOSFETs
DirectFETTM Substrate and PCB Layout, SH Outline (Small Size Can, H-Designation).
Please see DirectFET application note AN-1035 for all details regarding PCB assembly using DirectFET. This includes all recommendations for stencil and substrate designs.
1- Drain 2- Drain 3- Gate 4- Source 5- Drain 6- Drain
1 3 2 4
5
6
6
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IRF6665
DirectFET Outline Dimension, SH Outline (Small Size Can, H-Designation).
Please see DirectFET application note AN-1035 for all details regarding PCB assembly using DirectFET. This includes all recommendations for stencil and substrate designs.
Note: Controlling dimensions are in mm.
DIMENSIONS IMPERIAL METRIC MAX MIN CODE MIN AMAX 4.85 0.187 A 0.191 4.75 3.95 0.146 B 3.70 0.156 2.85 0.108 C 2.75 0.112 0.45 0.014 D 0.35 0.018 0.62 0.023 E 0.58 0.024 0.62 0.023 F 0.024 0.58 0.67 0.025 G 0.026 0.63 0.87 0.033 H 0.83 0.034 K 0.99 1.03 0.039 0.041 2.33 0.090 L 0.092 2.29 0.58 0.019 M 0.023 0.48 0.08 0.001 N 0.003 0.03 0.17 0.003 P 0.08 0.007
DirectFET Part Marking
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7
IRF6665
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6665). For 1000 parts on 7" reel, order IRF6665TR1 REEL DIMENSIONS TR1 OPTION (QTY 1000) STANDARD OPTION (QTY 4800) IMPERIAL IMPERIAL METRIC METRIC CODE MIN MIN MAX MAX MIN MIN MAX MAX 12.992 6.9 A N.C N.C 330.0 177.77 N.C N.C B 0.795 0.75 N.C 20.2 19.06 N.C N.C N.C 0.504 0.53 C 0.50 0.520 12.8 13.5 12.8 13.2 D 0.059 0.059 N.C 1.5 1.5 N.C N.C N.C E 3.937 2.31 N.C 100.0 58.72 N.C N.C N.C F N.C N.C 0.53 N.C N.C 0.724 13.50 18.4 G 0.488 0.47 12.4 11.9 N.C 0.567 12.01 14.4 H 0.469 0.47 11.9 11.9 N.C 0.606 12.01 15.4
Loaded Tape Feed Direction
NOTE: CONTROLLING DIMENSIONS IN MM
CODE A B C D E F G H
DIMENSIONS IMPERIAL METRIC MIN MAX MAX MIN 0.311 0.319 8.10 7.90 0.154 0.161 4.10 3.90 0.469 0.484 12.30 11.90 0.215 0.219 5.45 5.55 0.201 0.209 5.10 5.30 0.256 0.264 6.50 6.70 0.059 N.C 1.50 N.C 0.059 1.50 1.60 0.063
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/04
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